The wafer scale plating uniformity with thin Cu seed layer was studied. Plating experiments were performed on 300 mm diameter wafers with 4 nm, 5 nm and 10 nm thin Cu seed layers. The plating current distribution can be very nonuniform due to the high substrate resistance. In the case of extremely thin seed layer, the corrosion of Cu due to dissolved oxygen becomes significant. It may lead to exposed barrier layer near the wafer center. A modeling methodology was developed to study the Cu plating uniformity on the wafer scale. Simulation result matches well with experimental measurement and theoretical prediction. The plating uniformity and seed layer corrosion were studied for various seed layer thicknesses using the proposed modeling approach.
Original languageEnglish
Pages (from-to)242-248
Number of pages7
JournalElectrochimica Acta
Publication statusPublished - 26 Apr 2013

    Research areas

  • Cu plating, wafer scale, thin seed layer, corrosion, finite element method

ID: 2312864