High voltage GaN power transistors have the potential to enable high efficiency and power density of power electronic converters like on- board charger (OBC) in electric vehicles. A comprehensive design optimization with state-of- the-art GaN-HEMT devices is essential to achieve a lightweight, compact and efficient OBC. This paper presents a design optimization for achieving multiple objectives (efficiency and volume) at the same time. The optimization searches for optimal switching frequencies and suitable GaN-HEMT transistors for a given power rating. These state- of-the-art GaN-HEMT transistors are collected from different manufacture regarding the smallest values of Rds(on) and different type of packaging. The optimal solutions show that a 3.7 kW OBC based on 650V GaN devices can achieve an efficiency of 96.32%, volume of 1.82 L and power density of 2.03 kW/L.
Original languageEnglish
Title of host publication2019 IEEE Vehicle Power and Propulsion Conference (VPPC)
Place of Publicationhanoi, Vietnam
PublisherIEEE
Pages1-6
Number of pages6
ISBN (Electronic)978-1-7281-1249-7
ISBN (Print)978-1-7281-1250-3
DOIs
Publication statusPublished - 14 Oct 2019

ID: 49410402