A model for copper electroplating of through-silicon vias (TSV) is proposed based on the suppressor adsorption/desorption mechanism,with special emphasis on the bottom-up filling of these structures. The proposed model is applicable for both 2-component(suppressor and accelerator) and 1-component (suppressor only) Cu plating chemistries. Numerical simulation was performed for the filling of 5 um(diameter)×40 um(depth) vias. Simulated Cu profiles and the corresponding dependencies on additive concentration are confronted with existing experimental results.
Original languageEnglish
Pages (from-to)3051-3056
Number of pages6
JournalJournal of the Electrochemical Society
Volume12
Issue number160
Publication statusPublished - 25 Jun 2013

    Research areas

  • through-silicon via, suppressor desorption

ID: 2336736