GSolver software is used to optimize the parameters of a GaAs-based layers structure for modulating the reflectivity of light. This structure can be used in an Integrated Mirror Optical Switch (IMOS) for the Q-switching technology. A system of low doped GaAs and highly doped AlGaAs structure is built on a binary diffraction grating composed of germanium and gold. The diffraction efficiency is determined with and without the existence of free carriers in the highly doped layer. The impact of the sheet charge density at the interface of the heterostructure is considered in determining of the diffraction efficiency. At the end of the study, the structure parameters and thicknesses are determined for a high sensitive device.
Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics (ICSE)
PublisherIEEE
Pages300-303
Number of pages4
ISBN (Electronic)978-1-5090-2383-7
ISBN (Print)978-1-5090-2384-4
DOIs
Publication statusPublished - 22 Sep 2016
EventSemiconductor Electronics (ICSE) - Kebangsaan, Malaysia
Duration: 17 Aug 201619 Aug 2016
http://ieeemalaysia-eds.org/icse2016/home.html

Conference

ConferenceSemiconductor Electronics (ICSE)
CountryMalaysia
CityKebangsaan
Period17/08/1619/08/16
Internet address

    Research areas

  • Q-switch, infrared, CO2, LASERS, GaAs-AlGaAs

ID: 25869565