Integrating an optical receiver in CMOS optimized for near infrared light (NIR) remains appealing but at the same time challenging due to the deep photon penetration depth. A novel implementation of a light detector is demonstrated in a 350 nm CMOS technology, whereby, through adding a majority current with associated electric field distribution in the silicon detection volume, photo-generated minority electrons get quickly guided to the center of this volume. In the center, a tiny PN junction collects the photo-electrons. The detection speed subsequently increases, NIR light is received with improved responsivity and the detector capacitance gets drastically reduced to femtofarad level. The latter improvement also increases signal-to-noise performance and can be used to trade-off with other design parameters to improve global performance of the opto-electronic system. An optical datacom receiver at 1 Gbps is demonstrated at NIR-wavelength for proving useful Current-Assisted Photodiode detector operation in an actual CMOS system.
Original languageEnglish
Title of host publicationSilicon Photonics XIV
Subtitle of host publicationSilicon Photonics XIV
EditorsGraham T. Reed, Andrew P. Knights
Place of PublicationSan Francisco, California, USA
Number of pages8
ISBN (Electronic)9781510624887
Publication statusPublished - 4 Mar 2019
EventSPIE Photonics West 2019 - Moscone center, San Francisco, United States
Duration: 2 Feb 20197 Feb 2019

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


ConferenceSPIE Photonics West 2019
CountryUnited States
CitySan Francisco
Internet address

    Research areas

  • CMOS, Current assistance, Integrated optical receiver, Optical communication, Photo-collection, Photodetector

ID: 44228992