1. 1996
  2. Optical nonlinearity at 10.6 µm based on intervalley transfers in highly doped n-GaAs layers

    Stiens, J., Voronko, A., Shkerdin, G., Kotov, V. & Vounckx, R., 1996, In : Nonlinear Optics : Principles, Materials, Phenomena and Devices. 1, p. 166 1 p.

    Research output: Contribution to journalArticle

  3. The integrated Mirror Optical Switch: Optical Plasma Resonance Effects in Semiconductors used for the control of 10mm Infrared Light

    Stiens, J., 1996, Technical report ed. Vrije Universiteit Brussel.

    Research output: Book/ReportCommissioned report

  4. 1995
  5. Het optisch Gunn-effect bij 10.6 µm : studie van sub-ns optische schakel-elementen

    Stiens, J., 1995, URSI-95 Broadband Communications. URSI, p. 29-31

    Research output: Chapter in Book/Report/Conference proceedingConference paper

  6. Non-Linear Transmission of Medium-Infrared Light through a Structure containing High Doped GaAs Layers

    Voronko, A., Shkerdin, G., Stiens, J. & Vounckx, R., 1995, ICONO 95. ICONO 95, St Petersburg, Russia.

    Research output: Chapter in Book/Report/Conference proceedingMeeting abstract (Book)

  7. 1994
  8. Calculations of plasma wavelength in highly doped III-V semi-conductor alloys

    Stiens, J. & Vounckx, R., 1994, In : J. Appl. Phys.. 76, 6, p. 3526-3533 8 p.

    Research output: Contribution to journalArticle

  9. Experimental study of an InGaAs-InP resonant plasma waveguide modulator for medium-infrared light

    Stiens, J., De Tandt, C., Ranson, W., Vounckx, R., De Meester, P. & Moerman, I., 1994, In : Applied Physics Letters. 65, 18, p. 2341-2343

    Research output: Contribution to journalArticle

  10. Proposal for a High Speed Resonant Plasma Modulator with sub-Watt Power Dissipation for use in medium-IR Lidar Applications

    Stiens, J., De Tandt, C., Ranson, W., Vounckx, R., Veretennicoff, I. & Borghs, G., 1994, SPIE Proc.. SPIE Proc., Vol. 2310, pp. 84-95., p. 95 1 p.

    Research output: Chapter in Book/Report/Conference proceedingConference paper

  11. 1993
  12. A resonant III-V semiconductor layer and a grating coupler integrated in a waveguide modulator for far-infrared light

    Stiens, J., De Tandt, C., Ranson, W., Vounckx, R., Veretennicoff, I., Borghs, G. & De Meester, P., 1993, Topical Meeting on Photonics in Switching 93 (abstract PTuD11). Topical Meeting on Photonics in Switching 93 (abstract PTuD11), Palm Springs, USA.

    Research output: Chapter in Book/Report/Conference proceedingMeeting abstract (Book)

  13. Materials and Structures for the 10.6µm IMOS

    Stiens, J., De Tandt, C., Ranson, W. & Vounckx, R., 1993, URSI 93. URSI, p. 3-5

    Research output: Chapter in Book/Report/Conference proceedingConference paper

  14. Resonant III-V Semiconductor layer and a grating coupler Integrated in a waveguide modulator for far-infrared light

    Stiens, J., De Tandt, C., Ranson, W., Vounckx, R., Veretennicoff, I., Borghs, G., Moerman, I. & De Meester, P., 1993, Photonics in Switching 93. Photonics in Switching 93, Vol. 16, pp. 51-54, Palm Springs, USA., p. 54 1 p.

    Research output: Chapter in Book/Report/Conference proceedingConference paper

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